| Device | Parameter | Condition |
|---|---|---|
| GC | Column | HP-FFAP (0.32 mm i.d. × 30 m, 0.25 µM) |
| Oven temperature program | 60°C (4 min) → 115°C(28°C/min) → 240°C(20°C/min, 5 min) | |
| Inlet temperature | 200°C | |
| Injector temperature | 200°C | |
| Injection volume | 1 µL | |
| Split ratio | Splitless | |
| Carrier | Helium, 1.0 mL/min | |
| MS | Ionization mode | Electron ionization (EI) |
| Electron impact mode | 70 eV | |
| Selected ion (m/z) | 74 | |
| MS ion source temperature | 200°C |